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IRHMK57160 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMK57160
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHMK57160 Datasheet, IRHMK57160 PDF,ピン配置, 機能
PD-97415
RADIATION HARDENED
IRHMK57160
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMK57160 100K Rads (Si)
IRHMK53160 300K Rads (Si)
IRHMK54160 500K Rads (Si)
IRHMK58160 1000K Rads (Si)
RDS(on)
0.013
0.013
0.013
0.013
ID
45A*
45A*
45A*
45A*
Low-Ohmic
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
493 mJ
45 A
20.8
mJ
6.7
-55 to 150
V/ns
oC
300 (for 5s)
8.0 (Typical)
g
1
08/27/09

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