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Número de pieza | IRHMK57160 | |
Descripción | RADIATION HARDENED POWER MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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RADIATION HARDENED
IRHMK57160
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMK57160 100K Rads (Si)
IRHMK53160 300K Rads (Si)
IRHMK54160 500K Rads (Si)
IRHMK58160 1000K Rads (Si)
RDS(on)
0.013Ω
0.013Ω
0.013Ω
0.013Ω
ID
45A*
45A*
45A*
45A*
Low-Ohmic
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
493 mJ
45 A
20.8
mJ
6.7
-55 to 150
V/ns
oC
300 (for 5s)
8.0 (Typical)
g
1
08/27/09
1 page Pre-Irradiation
IRHMK57160
12000
10000
8000
6000
4000
VGS = 0V, f = 1 MH10z0KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 45A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1.0
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHMK57160.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHMK57160 | RADIATION HARDENED POWER MOSFET | International Rectifier |
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