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IRHM57264SE PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM57264SE
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHM57264SE Datasheet, IRHM57264SE PDF,ピン配置, 機能
PD-93798B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57264SE
250V, N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHM57264SE 100K Rads (Si)
RDS(on) ID
0.06635A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
35*
Continuous Drain Current
26
Pulsed Drain Current À
140
Max. Power Dissipation
250
Linear Derating Factor
2.0
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
500
Avalanche Current À
35
Repetitive Avalanche Energy À
25
Peak Diode Recovery dv/dt Â
5.0
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in.(1.6 mm from case for 10s))
Weight
9.3 ( Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/23/06

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