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BLF8G27LS-150V の電気的特性と機能

BLF8G27LS-150VのメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF8G27LS-150V
部品説明 Power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF8G27LS-150V Datasheet, BLF8G27LS-150V PDF,ピン配置, 機能
BLF8G27LS-150V;
BLF8G27LS-150GV
Power LDMOS transistor
Rev. 3 — 26 June 2013
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30 30[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

1 Page





BLF8G27LS-150V pdf, ピン配列
NXP Semiconductors
BLF8G27LS-150(G)V
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 45 W
Typ Unit
0.30 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS
VGS(th)
IDSS
IDSX
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 2.16 mA
VDS = 10 V; ID = 216 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 10.8 A
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
Min Typ
65 -
1.5 1.9
--
- 40
Max Unit
-V
2.3 V
4.5 A
-A
- - 450 nA
- 16 - S
- 0.06 -
Table 7. RF characteristics
Test signal: 2-carrier W-CDMA, 3GPP test model; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on
the CCDF, carrier spacing 5 MHz; f1 = 2602.5 MHz; f2 = 2607.5 MHz; f3 = 2692.5 MHz;
f4 = 2697.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise
specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
RLin
D
ACPR5M
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
PL(AV) = 45 W
PL(AV) = 45 W
PL(AV) = 45 W
PL(AV) = 45 W
16.8 18 -
- 10 7
26 30 -
- 30 26
dB
dB
%
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G27LS-150V and BLF8G27LS-150GV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1300 mA; PL = 150 W (CW); f = 2600 MHz.
BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
3 of 17


3Pages


BLF8G27LS-150V 電子部品, 半導体
NXP Semiconductors
BLF8G27LS-150(G)V
Power LDMOS transistor
7.4 Graphical data
7.4.1 Pulsed CW

*S
G%



DDD





     
3/ G%P
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2600 MHz
(2) f = 2655 MHz
(3) f = 2700 MHz
Fig 3. Power gain as a function of output power;
typical values

Ș'


DDD



 



     
3/ G%P
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2600 MHz
(2) f = 2655 MHz
(3) f = 2700 MHz
Fig 4. Drain efficiency as a function of out power;
typical values
BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
6 of 17

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部品番号部品説明メーカ
BLF8G27LS-150GV

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors
BLF8G27LS-150V

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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