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PDF BLF884P Data sheet ( Hoja de datos )
| Número de pieza | BLF884P | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011
Product data sheet
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M) Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 150
858 70
-
-
21 46 32 -
21 33 -
31[1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
70 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
1 page  
NXP Semiconductors
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
24
Gp
(dB)
20
001aao029
-10
Gp IMDshldr
(dBc)
-20
16
IMDshldr
-30
12 -40
BLF884P; BLF884PS
UHF power LDMOS transistor
9.5
PAR
(dB)
8.5
7.5
6.5
PAR
001aao030
50
ηD
(%)
40
30
ηD
20
8 -50
400 500 600 700 800 900
f (MHz)
Fig 2.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
5.5 10
400 500 600 700 800 900
f (MHz)
Fig 3.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF884P_BLF884PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 December 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BLF884P; BLF884PS
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
D
A
D1
U1
H1
1
F
5
D
w2 D
2
SOT1121B
c
H U2
E1 E
34
b w3
Q
e
Dimensions
0 5 10 mm
scale
Unit(1)
A
b
c D D1 e E E1 F
H H1 Q U1 U2 w2 w3
max 4.75 3.94 0.18 20.02 19.96
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
mm nom
8.89
0.51 0.25
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
inches nom
0.35
0.02 0.01
min 0.136 0.145 0.003 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
References
IEC
JEDEC
JEITA
European
projection
SOT1121B
Fig 8. Package outline SOT1121B
sot1121b_po
Issue date
09-10-12
09-12-14
BLF884P_BLF884PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 December 2011
© NXP B.V. 2011. All rights reserved.
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