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PDF BLF882S Data sheet ( Hoja de datos )
| Número de pieza | BLF882S | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF882; BLF882S
UHF power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 200 W in broadband applications from HF to
860 MHz. The excellent ruggedness and broadband performance of this device makes it
ideal for digital transmitter applications.
Table 1. Test information
RF performance at Tcase = 25 C in a class-AB test circuit.
Test signal
f VDS PL(AV)
(MHz)
(V) (W)
Gp D
(dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR
(dB)
-
-
8.0 to 8.4 [1]
[1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on
CCDF.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Transmitter applications in the HF to 860 MHz frequency range
Industrial applications in the HF to 860 MHz frequency range
Broadcast transmitters
1 page  
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
7.3 Graphical data
7.3.1 DVB-T
*S
G%
*S
Ș'
DDD
Ș'
3$5
G%
3$5
$&35
DDD
$&35
G%F
3/ :
3/ :
VDS = 50 V; IDq = 100 mA; f = 705 MHz.
Fig 2. Power gain and drain efficiency as function of
output power; typical values
Fig 3.
VDS = 50 V; IDq = 100 mA; f = 705 MHz; PAR of input
signal = 9.5 dB at 0.01 % probability on CCDF.
Peak-to-average ratio and adjacent channel
power ratio as function of output power;
typical values
7.3.2 CW pulsed
*S
G%
DDD
Ș'
DDD
3/ :
3/ :
VDS = 50 V; f = 705 MHz; tp = 100 s; = 10 %.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 300 mA
Fig 4. Power gain as a function of output power;
typical values
VDS = 50 V; f = 705 MHz; tp = 100 s; = 10 %.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 300 mA
Fig 5. Drain efficiency as a function of output power;
typical values
BLF882_BLF882S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF882_BLF882S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 12
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