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PDF BLF879PS Data sheet ( Hoja de datos )
| Número de pieza | BLF879PS | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF879P; BLF879PS
UHF power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 42 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 200
858 95
-
-
21 47 33 -
21 33 -
31 [1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
95 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
1 page  
NXP Semiconductors
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
24
Gp
(dB)
20
aaa-000340
-10
lMDshldr
(dBc)
Gp -20
16
lMDshldr
-30
12 -40
BLF879P; BLF879PS
UHF power LDMOS transistor
9.5
PAR
(dB)
8.5
7.5
6.5
PAR
ηD
aaa-000341
50
ηD
(%)
40
30
20
8 -50
400 500 600 700 800 900
f (MHz)
Fig 2.
PL(AV) = 95 W; VDS = 42 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
5.5 10
400 500 600 700 800 900
f (MHz)
Fig 3.
PL(AV) = 95 W; VDS = 42 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF879P_BLF879PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
BLF879P; BLF879PS
UHF power LDMOS transistor
SOT539A
A
H U2
L
A
D
F
D1
U1
q
H1
1
B
C
w2 M C M
2
c
p E1 E
5 w1 M A M B M
34
b
e
w3 M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
bc
D D1 e E E1 F H H1 L
pQ
q U1 U2 w1 w2 w3
mm
4.7
4.2
11.81
11.56
0.18
0.10
31.55
30.94
31.52
30.96
13.72
9.50
9.30
9.53
9.27
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
3.30
3.05
2.26
2.01
35.56
41.28
41.02
10.29
10.03
0.25
0.51
0.25
inches
0.185
0.165
0.465
0.455
0.007
0.004
1.242
1.218
1.241
1.219
0.540
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
1.005
0.995
0.137
0.117
0.130 0.089
0.120 0.079
1.400
1.625
1.615
0.405
0.395
0.010
0.020
0.010
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
SOT539A
10-02-02
12-05-02
Fig 9. Package outline SOT539A
BLF879P_BLF879PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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