|
|
BLF879PのメーカーはNXP Semiconductorsです、この部品の機能は「UHF power LDMOS transistor」です。 |
部品番号 | BLF879P |
| |
部品説明 | UHF power LDMOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBLF879Pダウンロード(pdfファイル)リンクがあります。 Total 16 pages
BLF879P; BLF879PS
UHF power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 42 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 200
858 95
-
-
21 47 33 -
21 33 -
31 [1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
95 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
1 Page NXP Semiconductors
BLF879P; BLF879PS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 95 W
[1] Rth(j-c) is measured under RF conditions.
Typ Unit
[1] 0.15 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA [1] 104 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current
VGS = 0 V; VDS = 42 V
- - 2.8 A
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
- 38 - A
IGSS gate leakage current
VGS = 10 V; VDS = 0 V
- - 280 nA
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.5 A
[1] -
120 -
m
Ciss input capacitance
VGS = 0 V; VDS = 42 V;
f = 1 MHz
[2] -
210 -
pF
Coss
output capacitance
VGS = 0 V; VDS = 42 V;
f = 1 MHz
- 72 - pF
Crss reverse transfer capacitance VGS = 0 V; VDS = 42 V;
f = 1 MHz
- 1.5 - pF
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 7. RF characteristics
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
IDq
PL(AV)
Gp
D
IMD3
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
- 42
[1] -
1.3
200 -
-
-
-
V
A
W
20 21 - dB
43 47 - %
- 33 29 dBc
BLF879P_BLF879PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
3 of 16
3Pages NXP Semiconductors
BLF879P; BLF879PS
UHF power LDMOS transistor
7.2 Impedance information
BLF879P_BLF879PS
Product data sheet
gate 1
Zi
gate 2
Fig 4. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(AV) = 95 W (DVB-T).
f Zi ZL
MHz
300
0.617 j1.715
4.164 + j0.608
325
0.635 j1.355
4.101 + j0.636
350
0.655 j1.026
4.036 + j0.661
375
0.677 j0.721
3.968 + j0.681
400
0.702 j0.435
3.898 + j0.696
425
0.731 j0.164
3.826 + j0.707
450
0.762 + j0.096
3.753 + j0.713
475
0.798 + j0.347
3.679 + j0.715
500
0.839 + j0.592
3.604 + j0.713
525
0.884 + j0.833
3.528 + j0.706
550
0.936 + j1.072
3.453 + j0.695
575
0.995 + j1.310
3.377 + j0.680
600
1.063 + j1.549
3.302 + j0.661
625
1.141 + j1.791
3.227 + j0.638
650
1.230 + j2.037
3.153 + j0.612
675
1.334 + j2.289
3.079 + j0.582
700
1.456 + j2.548
3.007 + j0.549
725
1.599 + j2.814
2.936 + j0.513
750
1.768 + j3.090
2.866 + j0.474
775
1.971 + j3.376
2.797 + j0.432
800
2.214 + j3.671
2.729 + j0.387
825
2.510 + j3.975
2.663 + j0.340
850
2.873 + j4.282
2.599 + j0.291
875
3.320 + j4.584
2.535 + j0.240
900
3.875 + j4.865
2.474 + j0.186
925
4.562 + j5.095
2.414 + j0.131
950
5.409 + j5.223
2.355 + j0.074
975
6.426 + j5.166
2.298 + j0.015
1000
7.587 + j4.807
2.243 j0.045
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
6 of 16
6 Page | |||
ページ | 合計 : 16 ページ | ||
|
PDF ダウンロード | [ BLF879P データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BLF879P | UHF power LDMOS transistor | NXP Semiconductors |
BLF879PS | UHF power LDMOS transistor | NXP Semiconductors |