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BLF644P の電気的特性と機能

BLF644PのメーカーはNXP Semiconductorsです、この部品の機能は「Broadband power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF644P
部品説明 Broadband power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF644P Datasheet, BLF644P PDF,ピン配置, 機能
BLF644P
Broadband power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 70 W LDMOS RF power transistor for broadcast transmitter, communications and
industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for
digital applications.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source test circuit.
Test signal
f
VDS
PL
(MHz)
(V) (W)
CW, class-A
860 32 100
CW pulsed, class-AB
860 32 100
2-tone, class-AB
860 32 45
860 32 30
Gp
(dB)
23
23.5
23
24
D IMD
(%) (dBc)
65 -
66 -
50 25
40 35
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1300 MHz frequency range
Industrial applications in the HF to 1300 MHz frequency range
Broadcast transmitters

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BLF644P pdf, ピン配列
NXP Semiconductors
BLF644P
Broadband power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS
VGS(th)
VGSq
IDSS
IDSX
IGSS
gfs
RDS(on)
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
VGS = 0 V; ID = 0.5 mA
VDS = 32 V; ID = 50 mA
VDS = 32 V; IDq = 250 mA
VGS = 0 V; VDS = 32 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 10 V; VDS = 0 V
VDS = 10 V; ID = 2.5 A
VGS = VGS(th) + 3.75 V;
ID = 1.75 A
Min Typ
65 -
1.4 1.9
1.5 2.0
--
- 9.0
Max Unit
-V
2.4 V
2.5 V
1.4 A
-A
--
140 nA
- 3.3 - S
- 300 - m
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Ciss input capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
Coss
output capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz
Min Typ Max Unit
- 39 - pF
- 15 - pF
- 0.84 - pF
Table 8. RF characteristics
Test signal: CW pulsed, class-AB; f = 860 MHz; RF performance at VDS = 32 V; IDq = 200 mA;
Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 100 W
22.8 23.5 -
dB
D
drain efficiency
PL = 100 W
62 66 -
%
RLin
input return loss
PL = 100 W
-
15 7
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF644P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V;
f = 860 MHz at rated load power.
BLF644P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 12


3Pages


BLF644P 電子部品, 半導体
NXP Semiconductors
BLF644P
Broadband power LDMOS transistor
7.3 Graphical data
7.3.1 1-Tone CW

*S
G%


 

DDD




     
3/ :
VDS = 32 V; f = 860 MHz.
(1) IDq = 2 100 mA
(2) IDq = 2 200 mA
(3) IDq = 2 300 mA
Fig 3. Power gain as a function of output power;
typical values

Ș'


DDD



 




     
3/ :
VDS = 32 V; f = 860 MHz.
(1) IDq = 2 100 mA
(2) IDq = 2 200 mA
(3) IDq = 2 300 mA
Fig 4. Drain efficiency as a function of output power;
typical values
BLF644P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 12

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部品番号部品説明メーカ
BLF644P

Broadband power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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