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BLF640のメーカーはNXP Semiconductorsです、この部品の機能は「Broadband power LDMOS transistor」です。 |
部品番号 | BLF640 |
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部品説明 | Broadband power LDMOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBLF640ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
BLF640
Broadband power LDMOS transistor
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1. Typical performance
IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.3 31
ACPR
(dBc)
50 [1]
39 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
No internal matching for broadband operation
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for applications in the HF to 2200 MHz frequency range
Broadcast drivers
1 Page NXP Semiconductors
BLF640
Broadband power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter
V(BR)DSS
VGS(th)
IDSS
IDSX
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 0.5 mA
VDS = 10 V; ID = 18 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 0.9 A
VGS = VGS(th) + 3.75 V;
ID = 0.625 A
Min Typ Max Unit
65 - - V
1.4 1.9 2.4 V
- - 1.5 A
- 3.1 - A
- - 150 nA
- 0.5 - S
- 0.4 -
Table 7. AC characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter
Crs feedback capacitance
Conditions
VGS = 0 V; VDS = 28 V;
f = 1 MHz
Min Typ Max Unit
- 0.5 - pF
Table 8. RF characteristics
PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; RF performance at VDS = 28 V; IDq = 100 mA;
Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Test signal: 2-carrier W-CDMA
Gp
D
ACPR
power gain
drain efficiency
adjacent channel power ratio
Test signal: 1-carrier W-CDMA
Gp
D
ACPR
power gain
drain efficiency
adjacent channel power ratio
f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz
PL(AV) = 0.7 W
- 18.5 -
dB
PL(AV) = 0.7 W
- 15 -
%
PL(AV) = 0.7 W
- 50 -
dBc
f1 = 2112.5 MHz; f2 = 2167.5 MHz
PL(AV) = 2 W
17.3 19.3 -
dB
PL(AV) = 2 W
29 31 -
%
PL(AV) = 2 W
- 39 36 dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF640 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL = 10 W.
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
3 of 12
3Pages NXP Semiconductors
BLF640
Broadband power LDMOS transistor
−30
001aal126
−52
001aal127
ACPR
(dBc)
ACPR
(dBc)
−40 −56
(3)
(2)
(1)
−50
−60
−60
01234
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 7. Adjacent channel power ratio as a function of
load power; typical values
(3)
(2)
(1)
−64
01234
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 8. Adjacent channel power ratio as a function of
load power; typical values
7.2.3 2-Carrier W-CDMA
40
RLin
(dB)
30
001aal128
(1)
20
(2)
(3)
10
0
0 0.6 1.2 1.8
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 9. Input return loss as a function of load power; typical values
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
6 of 12
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