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BLF640 の電気的特性と機能

BLF640のメーカーはNXP Semiconductorsです、この部品の機能は「Broadband power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF640
部品説明 Broadband power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF640 Datasheet, BLF640 PDF,ピン配置, 機能
BLF640
Broadband power LDMOS transistor
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1. Typical performance
IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.3 31
ACPR
(dBc)
50 [1]
39 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
No internal matching for broadband operation
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for applications in the HF to 2200 MHz frequency range
Broadcast drivers

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BLF640 pdf, ピン配列
NXP Semiconductors
BLF640
Broadband power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter
V(BR)DSS
VGS(th)
IDSS
IDSX
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 0.5 mA
VDS = 10 V; ID = 18 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 0.9 A
VGS = VGS(th) + 3.75 V;
ID = 0.625 A
Min Typ Max Unit
65 - - V
1.4 1.9 2.4 V
- - 1.5 A
- 3.1 - A
- - 150 nA
- 0.5 - S
- 0.4 -
Table 7. AC characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter
Crs feedback capacitance
Conditions
VGS = 0 V; VDS = 28 V;
f = 1 MHz
Min Typ Max Unit
- 0.5 - pF
Table 8. RF characteristics
PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; RF performance at VDS = 28 V; IDq = 100 mA;
Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Test signal: 2-carrier W-CDMA
Gp
D
ACPR
power gain
drain efficiency
adjacent channel power ratio
Test signal: 1-carrier W-CDMA
Gp
D
ACPR
power gain
drain efficiency
adjacent channel power ratio
f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz
PL(AV) = 0.7 W
- 18.5 -
dB
PL(AV) = 0.7 W
- 15 -
%
PL(AV) = 0.7 W
- 50 -
dBc
f1 = 2112.5 MHz; f2 = 2167.5 MHz
PL(AV) = 2 W
17.3 19.3 -
dB
PL(AV) = 2 W
29 31 -
%
PL(AV) = 2 W
- 39 36 dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF640 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL = 10 W.
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
3 of 12


3Pages


BLF640 電子部品, 半導体
NXP Semiconductors
BLF640
Broadband power LDMOS transistor
30
001aal126
52
001aal127
ACPR
(dBc)
ACPR
(dBc)
40 56
(3)
(2)
(1)
50
60
60
01234
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 7. Adjacent channel power ratio as a function of
load power; typical values
(3)
(2)
(1)
64
01234
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 8. Adjacent channel power ratio as a function of
load power; typical values
7.2.3 2-Carrier W-CDMA
40
RLin
(dB)
30
001aal128
(1)
20
(2)
(3)
10
0
0 0.6 1.2 1.8
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 9. Input return loss as a function of load power; typical values
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
6 of 12

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