|
|
BLF25M612GのメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。 |
部品番号 | BLF25M612G |
| |
部品説明 | Power LDMOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBLF25M612Gダウンロード(pdfファイル)リンクがあります。 Total 11 pages
BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 3 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications
and is assembled in a high performance ceramic package.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 12
19
D
(%)
60
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range 2400 MHz to
2500 MHz (this product is qualified according to the solid state cooking profile)
1 Page NXP Semiconductors
BLF25M612; BLF25M612G
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 12 W
Typ Unit
4.0 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.18 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.9 2.4 V
IDSS drain leakage current
VGS = 0 V; VDS = 28 V - - 1.4 A
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
3.2 -
A
IGSS gate leakage current
VGS = 11 V; VDS = 0 V - - 140 nA
gfs
forward transconductance
VDS = 10 V; ID = 0.9 A -
1.3 -
S
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 0.6 A
-
0.8 1.3
Table 7. RF characteristics
Test signal: CW at f = 2450 MHz; RF performance at VDS = 28 V; IDq = 10 mA; Tcase = 25 C; unless
otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp power gain
RLin input return loss
D drain efficiency
PL = 12 W
PL = 12 W
PL = 12 W
17 19 -
dB
- 14 10 dB
54 60 -
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLF25M612 and BLF25M612G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 10 mA; PL = 12 W (CW); f = 2450 MHz.
BLF25M612_BLF25M612G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 11
3Pages NXP Semiconductors
8. Package outline
Earless flanged ceramic package; 2 leads
D
A
U1
D1
H1
1
BLF25M612; BLF25M612G
Power LDMOS transistor
SOT975B
F
A
c
H
E1 U2
E
2
b
w1 A
0
scale
5 mm
Q
Dimensions (mm dimensions are derived from the original inch dimensions)
Unit A b c D D1 E E1 F H H1 Q U1 U2 w1
max 3.15 3.38 0.23 6.55 6.93 6.55 6.93 0.23 11.05 7.49 0.76 6.43 6.43
mm nom
0.51
min 2.59 3.23 0.18 6.40 6.78 6.40 6.78 0.18 10.80 6.73 0.66 6.27 6.27
max 0.124 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.295 0.030 0.253 0.253
inches nom
0.02
min 0.102 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.425 0.265 0.026 0.247 0.247
Outline
version
SOT975B
IEC
Fig 5. Package outline SOT975B
References
JEDEC
JEITA
European
projection
sot975b_po
Issue date
07-09-28
14-10-20
BLF25M612_BLF25M612G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 11
6 Page | |||
ページ | 合計 : 11 ページ | ||
|
PDF ダウンロード | [ BLF25M612G データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BLF25M612 | Power LDMOS transistor | NXP Semiconductors |
BLF25M612G | Power LDMOS transistor | NXP Semiconductors |