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PDF BLF2425M9L30 Data sheet ( Hoja de datos )
| Número de pieza | BLF2425M9L30 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF2425M9L30;
BLF2425M9LS30
Power LDMOS transistor
Rev. 1 — 3 June 2015
Objective data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW
applications and are assembled in a high performance ceramic package.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
32 30
18.5
D
(%)
61
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz
1 page  
NXP Semiconductors
BLF2425M9L30; BLF2425M9LS30
Power LDMOS transistor
7.3 Test circuit
PP
PP
PP
&
&
5
& &
&
&
&
&
&
&
&
Fig 2.
Printed-Circuit Board (PCB): Duroid 6035HTC; height = 0.762 mm.
See Table 9 for a list of components.
Component layout
DDD
Table 9. List of components
See Figure 2 for component layout.
Component
Description
C1, C2, C4, C5 multilayer ceramic chip capacitor
C3 multilayer ceramic chip capacitor
C6, C7
multilayer ceramic chip capacitor
C8, C10
multilayer ceramic chip capacitor
C9, C11
multilayer ceramic chip capacitor
R1 SMD resistor
Value
15 pF
0.3 pF
0.8 pF
100 nF
4.7 F
9.1
Remarks
ATC100A150FT150XT
ATC100A0R6BT150XTV
ATC100A0R8BT150XTV
GRM21BR71H104KA01L
GRM32ER71H475KA88L
SMD 0603
BLF2425M9L30_M9LS30
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF2425M9L30; BLF2425M9LS30
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF2425M9L30_M9LS30
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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