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BLF184XRSのメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。 |
部品番号 | BLF184XRS |
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部品説明 | Power LDMOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBLF184XRSダウンロード(pdfファイル)リンクがあります。 Total 15 pages
BLF184XR; BLF184XRS
Power LDMOS transistor
Rev. 3 — 1 April 2014
Product data sheet
1. Product profile
1.1 General description
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 108
VDS
PL
(V) (W)
50 700
50 750
Gp
(dB)
23.9
23.5
D
(%)
73.5
81.9
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 Page NXP Semiconductors
BLF184XR; BLF184XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 150 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.18
[3] 0.065
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 3.
=WKMF
.:
DDD
WSV
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.75 mA
VGS(th)
VGSq
gate-source threshold voltage VDS = 10 V; ID = 275 mA
gate-source quiescent voltage VDS = 50 V; ID = 50 mA
Min
135
1.25
-
Typ
-
1.9
1.6
Max Unit
-V
2.25 V
-V
BLF184XR_BLF184XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 15
3Pages NXP Semiconductors
BLF184XR; BLF184XRS
Power LDMOS transistor
($6
-
DDD
,$6$
Fig 4. Non-repetitive avalanche energy as a function of single pulse avalanche current,
typical values
7.4 Test circuit
BLF184XR_BLF184XRS
Product data sheet
PP
PP
PP
& &
& / /
&
& / /
&
7
&
&
5
5
&
&
&
7
/ &
&
& &
&
& / &
& & &
& / &
&
&
/ &
&
PP
PP
Fig 5.
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5 F/m; thickness = 0.765 mm;
thickness copper plating = 35 m, gold plated.
See Table 11 for a list of components.
Component layout for class-AB production test circuit
DDD
Table 11. List of components
For test circuit see Figure 5.
Component
Description
Value
C1, C2
multilayer ceramic chip capacitor 910 pF
C3 multilayer ceramic chip capacitor 47 pF
C4 multilayer ceramic chip capacitor 51 pF
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 April 2014
Remarks
[1]
[1]
[1]
© NXP Semiconductors N.V. 2014. All rights reserved.
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部品番号 | 部品説明 | メーカ |
BLF184XR | Power LDMOS transistor | NXP Semiconductors |
BLF184XRG | Power LDMOS transistor | NXP Semiconductors |
BLF184XRS | Power LDMOS transistor | NXP Semiconductors |