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BLF183XR の電気的特性と機能

BLF183XRのメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF183XR
部品説明 Power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF183XR Datasheet, BLF183XR PDF,ピン配置, 機能
BLF183XR; BLF183XRS
Power LDMOS transistor
Rev. 2 — 22 May 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 88 to 108
pulsed RF
30 to 512
CW 30 to 512
VDS
(V)
50
50
50
35
PL
(W)
350
388
400
193
Gp
(dB)
28
26
15
14
D
(%)
75
80
48
47
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

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BLF183XR pdf, ピン配列
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 115 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.25
[3] 0.076
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.

=WK MF
.:










DDD










WS V

(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
BLF183XR_BLF183XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 15


3Pages


BLF183XR 電子部品, 半導体
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS EAS
(A) (J)
10 2.6
12.5 1.5
15 1.0
For information see application note AN10273.
7.4 Test circuit
PP
PP
&
PP
&
&
&
7
&
&
5
&

5

/
/ 5
&
&
&
5
&
&
&
/ 5
&
 /

& 5
7
&
&
&
&
&
&
PP
PP
PP
DDD
Fig 4.
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m, gold
plated.
See Table 11 for a list of components.
Component layout for class-AB production test circuit
BLF183XR_BLF183XRS
Product data sheet
Table 11. List of components
For test circuit see Figure 4.
Component Description
Value
C1, C4
multilayer ceramic chip capacitor 51 pF
C2, C3
multilayer ceramic chip capacitor 150 pF
C5, C6
multilayer ceramic chip capacitor 4.7 F, 50 V
C7, C8
multilayer ceramic chip capacitor 820 pF
C9 multilayer ceramic chip capacitor 11 pF
C10, C11
multilayer ceramic chip capacitor 820 pF
C12, C13
multilayer ceramic chip capacitor 4.7 F, 100 V
C14, C15, C21 electrolytic capacitor
51 pF
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
Remarks
[1]
[1]
[1]
[1]
[1]
[1]
© NXP Semiconductors N.V. 2015. All rights reserved.
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部品番号部品説明メーカ
BLF183XR

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors
BLF183XRS

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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