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BLF10M6LS135 の電気的特性と機能

BLF10M6LS135のメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF10M6LS135
部品説明 Power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF10M6LS135 Datasheet, BLF10M6LS135 PDF,ピン配置, 機能
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range

1 Page





BLF10M6LS135 pdf, ピン配列
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS
VGS(th)
VGSq
IDSS
IDSX
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 0.8 mA
VDS = 10 V; ID = 180 mA
VDS = 28 V; ID = 950 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9 A
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
Min Typ Max Unit
65 - - V
1.4 1.9 2.4 V
1.6 2.1 2.6 V
- - 3 A
24 32 - A
- - 300 nA
7 13 - S
- 0.1 -
Table 7. AC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz
Min Typ Max Unit
- 2.0 - pF
Table 8. RF characteristics
Test signal: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at
VDS = 28 V; IDq = 950 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
RLin
D
ACPR
power gain
input return loss
drain efficiency
adjacent channel power ratio
PL(AV) = 26.5 W
PL(AV) = 26.5 W
PL(AV) = 26.5 W
PL(AV) = 26.5 W
20.0 21.0 -
dB
- 10.0 6.5 dB
26.0 28.0 -
%
- 39 36.5 dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF10M6135 and BLF10M6LS135 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 950 mA; PL = 135 W; f = 894 MHz.
BLF10M6135_BLF10M6LS135
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 12


3Pages


BLF10M6LS135 電子部品, 半導体
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
7.3.2 2-Tone CW
23
Gp
(dB)
22
Gp
21
001aah865
60
ηD
(%)
45
30
ηD
20
15
20
IMD
(dBc)
30
40
50
001aah866
IMD3
IMD5
IMD7
19
0
0
25 50 75 100
PL(PEP) (W)
60
0
25 50 75 100
PL(PEP) (W)
Fig 4.
VDS = 28 V; IDq = 950 mA; f = 881 MHz (100 kHz).
Power gain and drain efficiency as function of
peak envelope power load power; typical
values
Fig 5.
VDS = 28 V; IDq = 950 mA; f = 881 MHz (100 kHz).
Intermodulation distortion as a function of
peak envelope power load power;
typical values
7.3.3 2-Carrier W-CDMA
24
Gp
(dB)
23
22
Gp
21
ηD
20
001aah867
50
ηD
(%)
40
30
20
10
20
ACPR
(dBc)
30
40
001aah868
19
0
0
12 24 36 48 60
PL(AV) (W)
50
0
20 40 60
PL(AV) (W)
Fig 6.
VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz;
carrier spacing 5 MHz.
Power gain and drain efficiency as function of
average output power; typical values
Fig 7.
VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz;
carrier spacing 5 MHz.
Adjacent power channel ratio as a function of
average output power; typical values
BLF10M6135_BLF10M6LS135
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 12

6 Page



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部品番号部品説明メーカ
BLF10M6LS135

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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