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BLF10H6600P の電気的特性と機能

BLF10H6600PのメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF10H6600P
部品説明 Power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF10H6600P Datasheet, BLF10H6600P PDF,ピン配置, 機能
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Rev. 2 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
Test signal
f
(MHz)
PL(AV)
(W)
PL(M)
(W)
Gp D IMD3
(dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
pulsed, class-AB
f1 = 860; f2 = 860.1
860
250 -
20.8 46 32
- 600 19.8 58 -
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (400 MHz to 1000 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications
Industrial applications

1 Page





BLF10H6600P pdf, ピン配列
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 250 W [1] 0.15 K/W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA
IDSS drain leakage current
VGS = 0 V; VDS = 50 V
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
IGSS gate leakage current
VGS = 10 V; VDS = 0 V
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.5 A
Min Typ
[1] 110 -
[1] 1.4 1.9
--
- 36
-
[1] -
-
143
Max Unit
-V
2.4 V
2.8 A
-A
280 nA
- m
[1] ID is the drain current.
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Ciss input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz [1] - 220 -
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz - 74 - pF
Crss reverse transfer
capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz - 1.2 - pF
[1] Capacitance values without internal matching.
Table 8. RF characteristics
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
IDq
PL(AV)
Gp
D
IMD3
drain-source voltage
-
quiescent drain current
[1] -
average output power
f1 = 860 MHz; f2 = 860.1 MHz
power gain
f1 = 860 MHz; f2 = 860.1 MHz
drain efficiency
f1 = 860 MHz; f2 = 860.1 MHz
third-order intermodulation f1 = 860 MHz; f2 = 860.1 MHz
distortion
250
19.8
42
-
50 -
1.3 -
--
20.8 -
46 -
32 28
V
A
W
dB
%
dBc
BLF10H6600P_BLF10H6600PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
3 of 18


3Pages


BLF10H6600P 電子部品, 半導体
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
gate 1
Zi
gate 2
Fig 2. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
7.3 Test circuit information
Table 10. List of components
For test circuit, see Figure 3, Figure 4 and Figure 5.
Component
Description
B1, B2
semi rigid coax
C1 multilayer ceramic chip capacitor
C2, C3, C4, C5, multilayer ceramic chip capacitor
C6
C7 multilayer ceramic chip capacitor
C8 multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
C10, C13, C14 multilayer ceramic chip capacitor
C11, C12
multilayer ceramic chip capacitor
C15, C16
multilayer ceramic chip capacitor
Value
25 ; 49.5 mm
12 pF
8.2 pF
6.8 pF
2.7 pF
2.2 pF
100 pF
10 pF
4.7 F, 50 V
C17, C18, C23,
C24
C19, C20
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 pF
10 F, 50 V
C21, C22
C30
C31
C32
C33, C34, C35
C36, C37
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
470 F; 63 V
10 pF
9.1 pF
3.9 pF
100 pF
4.7 F, 50 V
L1
L2
L3, L32
L4
L5
L30
L31
L33
R1, R2
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
wire resistor
-
-
-
-
-
-
-
-
10
Remarks
UT-090C-25 (EZ 90-25)
[1]
[1]
[2]
[2]
[2]
[3]
[2]
Kemet C1210X475K5RAC-TU or
capacitor of same quality.
[2]
TDK C570X7R1H106KT000N or
capacitor of same quality.
[4]
[4]
[4]
[4]
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[5] (W L) 15 mm 13 mm
[5] (W L) 5 mm 26 mm
[5] (W L) 2 mm 49.5 mm
[5] (W L) 1.7 mm 3.5 mm
[5] (W L) 2 mm 9.5 mm
[5] (W L) 5 mm 13 mm
[5] (W L) 2 mm 11 mm
[5] (W L) 2 mm 3 mm
BLF10H6600P_BLF10H6600PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
6 of 18

6 Page



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部品番号部品説明メーカ
BLF10H6600P

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors
BLF10H6600PS

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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