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BZT52H の電気的特性と機能

BZT52HのメーカーはNXP Semiconductorsです、この部品の機能は「Single Zener diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 BZT52H
部品説明 Single Zener diodes
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BZT52H Datasheet, BZT52H PDF,ピン配置, 機能
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
„ Total power dissipation: 830 mW
„ Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
„ Small plastic package suitable for
surface-mounted design
„ Low differential resistance
„ AEC-Q101 qualified
1.3 Applications
„ General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 10 mA
Tamb 25 °C
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 375 mW
[3] - - 830 mW
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
12
Graphic symbol
12
006aaa152

1 Page





BZT52H pdf, ピン配列
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF forward current
IZSM non-repetitive peak
reverse current
-
-
PZSM
Ptot
Tj
Tamb
Tstg
non-repetitive peak
reverse power dissipation
total power dissipation Tamb 25 °C
junction temperature
ambient temperature
storage temperature
[1] -
[2] -
[3] -
-
65
65
Max Unit
250 mA
see
Table 8, 9
and 10
40 W
375
830
150
+150
+150
mW
mW
°C
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] - - 330 K/W
[2] - - 150 K/W
[3] - - 70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
3 of 13


3Pages


BZT52H 電子部品, 半導体
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51
Tj = 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
VZ (V);
IZ = 2 mA
Maximum differential Reverse
resistance rdif (Ω)
current IR (μA)
Min Max IZ = 1 mA IZ = 5 mA Max VR (V)
27 B 26.5 27.5 250
40
0.05 18.9
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Min Max
21.4 25.3
C 25.1 28.9
30 B 29.4 30.6 250
40
0.05 21
24.4 29.4
C 28.0 32.0
33 B 32.3 33.7 250
40
0.05 23.1 27.4 33.4
C 31.0 35.0
36 B 35.3 36.7 250
60
0.05 25.2 30.4 37.4
C 34.0 38.0
39 B 38.2 39.8 300
75
0.05 27.3 33.4 41.2
C 37.0 41.0
43 B 42.1 43.9 325
80
0.05 30.1 37.6 46.6
C 40.0 46.0
47 B 46.1 47.9 325
90
0.05 32.9 42.0 51.8
C 44.0 50.0
51 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2
C 48.0 54.0
Diode
capacitance
Cd (pF)[1]
Max
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
50 1.0
50 1.0
45 0.9
45 0.8
45 0.7
40 0.6
40 0.5
40 0.4
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75
Tj = 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
VZ (V);
IZ = 2 mA
Maximum differential Reverse
resistance rdif (Ω)
current IR (μA)
Min Max IZ = 0.5 mA IZ = 2 mA Max VR (V)
56 B 54.9 57.1 375
120 0.05 39.2
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Min Max
52.2 63.8
C 52.0 60.0
62 B 60.8 63.2 400
140 0.05 43.4 58.8 71.6
C 58.0 66.0
68 B 66.6 69.4 400
160 0.05 47.6 65.6 79.8
C 64.0 72.0
75 B 73.5 76.5 400
175 0.05 52.5 73.4 88.6
C 70.0 79.0
Diode
capacitance
Cd (pF)[1]
Max
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
40 0.3
35 0.3
35 0.25
35 0.20
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 13

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