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PDF 1SS200 Data sheet ( Hoja de datos )
| Número de pieza | 1SS200 | |
| Descripción | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
1SS200
Unit: mm
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
100 (*)
2 (*)
200
mA
A
mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55~125 °C JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-4E2B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.13g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
― ― 0.1
μA
― ― 0.5
― 2.2 4.0 pF
― 1.6 4.0 ns
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS200.PDF ] | |
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