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1SS181 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1SS181
部品説明 SILICON EPITAXIAL PLANAR DIODE
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

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1SS181 Datasheet, 1SS181 PDF,ピン配置, 機能
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS181
1SS181
Ultra High Speed Switching Application
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.92V (Typ.)
z Fast reverse recovery time : trr = 1.6ns (Typ.)
z Small total capacitance : CT = 2.2pF (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
VRM
VR
IFM
IO
85
80
300 (*)
100 (*)
V
V
mA
mA
Surge current (10ms)
Power dissipation
IFSM
2 (*)
A
P 150 mW
Junction temperature
Storage temperature
Tj 125 °C
Tstg 55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
1-3G1E
Weight: 0.012g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mAs
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA (Fig.1)
Min Typ. Max Unit
0.61
0.74
V
0.92 1.20
― ― 0.1
μA
― ― 0.5
2.2 4.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1982-06
1 2014-03-01

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