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PDF NCE5558K Data sheet ( Hoja de datos )

Número de pieza NCE5558K
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE5558K Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE5558K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5558K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =55V,ID =58A
RDS(ON) < 13m@ VGS=10V
(Typ:10.5m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Synchronous rectifiers for, industrial power supplies
LED backlighting
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5558K
NCE5558K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
55
±20
58
41
100
80
0.64
-55 To 150
Unit
V
V
A
A
A
W
W/
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.6 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE5558K pdf
http://www.ncepower.com
Pb Free Product
NCE5558K
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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