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Número de pieza | 6HP04MH | |
Descripción | P-Channel Silicon MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! 6HP04MH
Ordering number : ENA0368
6HP04MH
Features
• 4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
Ratings
--60
±20
--120
--480
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : QB
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--100µA
VDS=--10V, ID=--60mA
ID=--60mA, VGS=--10V
ID=--30mA, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--60
--1.2
100
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
180 mS
5.1 6.6 Ω
6.8 9.6 Ω
13.5
pF
3.4 pF
1.3 pF
36.5
ns
38.0
ns
455 ns
160 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
6HP04MH/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 6HP04MH.PDF ] |
Número de pieza | Descripción | Fabricantes |
6HP04MH | P-Channel Silicon MOSFET | Sanyo Semicon Device |
6HP04MH | P-Channel Silicon MOSFET | ON Semiconductor |
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