|
|
PDF IRF6794MTRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6794MTRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF6794MTRPbF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
PD - 97457
IRF6794MPbF
IRF6794MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead and Bromide
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V
l Dual Sided Cooling Compatible
l Low Package Inductance
l Optimized for High Frequency Switching
Qg tot
31nC
Qgd
11nC
Qgs2
4.4nC
Qrr
51nC
Qoss Vgs(th)
27nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6794MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6794MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
32
25
200
250
200
26
Units
V
A
mJ
A
5
4 ID = 32A
3
TJ = 125°C
2
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= 26A
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.65mH, RG = 25Ω, IAS = 26A.
1
2/12/10
1 page  
1000
100
10
TJ = 150°C
1 TJ = 25°C
TJ = -40°C
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
10000
1000
IRF6794MTRPbF
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1 DC
1msec
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.0 0.1
10msec
1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
160 2.5
ID = 10mA
120
2.0
80
1.5
40
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
500
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.5A
3.5A
BOTTOM 25A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6794MTRPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF6794MTRPbF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |