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PDF FDS5682 Data sheet ( Hoja de datos )
| Número de pieza | FDS5682 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2008
FDS5682
N-Channel PowerTrench® MOSFET
60V, 7.5A, 21mΩ
Features
rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2008 Fairchild Semiconductor Corporation
FDS5682 Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
TJ = 25oC
15
10
TJ = 150oC
5
TJ = -55oC
0
1.5
2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
3.5
25
VGS = 10V
20
VGS = 5V
15
VGS = 3V
10
5
0
0
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 2.5V
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
Figure 7. Saturation Characteristics
80
60
ID = 7.5A
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
ID = 1A
0
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.25
VGS = VDS, ID = 250µA
1.5 1.00
1.0 0.75
0.5
-80
VGS = 10V, ID = 7.5A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.50
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDS5682 Rev. A1
5 www.fairchildsemi.com
5 Page 
SPICE Thermal Model
REV May 2005
FDS5682
Copper Area =1.0 in2
CTHERM1 TH 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 2e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3
RTHERM1 TH 8 1e-1
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
SABER Thermal Model
SABER thermal model FDS5682
Copper Area = 1.0 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 =2.0e-3
ctherm.ctherm2 8 7 =5.0e-3
ctherm.ctherm3 7 6 =1.0e-2
ctherm.ctherm4 6 5 =4.0e-2
ctherm.ctherm5 5 4 =9.0e-2
ctherm.ctherm6 4 3 =2e-1
ctherm.ctherm7 3 2 1
ctherm.ctherm8 2 tl 3
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25
}
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
COMPONANT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.04 in2
1.2e-1
0.5
1.3
26
39
55
TABLE 1. THERMAL MODELS
0.28 in2
0.52 in2
1.5e-1
2.0e-1
1.0 1.0
2.8 3.0
20 15
24 21
38.7 31.3
th JUNCTION
CTHERM1
8
CTHERM2
7
CTHERM3
6
CTHERM4
5
CTHERM5
4
CTHERM6
3
CTHERM7
2
CTHERM8
tl CASE
0.76 in2
2.0e-1
1.0
3.0
13
19
29.7
1.0 in2
2.0e-1
1.0
3.0
12
18
25
FDS5682 Rev. A1
11 www.fairchildsemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDS5682.PDF ] | |
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