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PDF DTA115TE Data sheet ( 特性 )

部品番号 DTA115TE
部品説明 Digital Transistors
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 

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DTA115TE Datasheet, DTA115TE PDF,ピン配置, 機能
MUN2141, MMUN2141L,
MUN5141, DTA115TE,
DTA115TM3, NSBA115TF3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
SOT723
CASE 631AA
STYLE 1
XM 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 2
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
DTA115T/D

1 Page





DTA115TE pdf, ピン配列
MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC59) (MUN2141)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT23) (MMUN2141L)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5141)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC75) (DTA115TE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT723) (DTA115TM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
http://onsemi.com
3
Max Unit
230
338
1.8
2.7
540
370
264
287
55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
55 to +150
mW
mW/°C
°C/W
°C


3Pages


DTA115TE 電子部品, 半導体
MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3
PACKAGE DIMENSIONS
D
3
HE 1
2
E
b
e
A
A1
SC59
CASE 318D04
ISSUE H
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN
NOM MAX
A 1.00
1.15
1.30
A1 0.01
0.06
0.10
b 0.35 0.43 0.50
c 0.09 0.14 0.18
D 2.70
2.90
3.10
E 1.30
1.50
1.70
e 1.70 1.90 2.10
L 0.20
0.40
0.60
H E 2.50
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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