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PDF MBRJ2545CTG Data sheet ( Hoja de datos )

Número de pieza MBRJ2545CTG
Descripción Schottky Power Rectifier
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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MBRJ2545CTG
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SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metaltosilicon power diode.
Stateoftheart geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very lowvoltage, highfrequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V0 @ 0.125 in
Electrically Isolated
No Isolation Hardware Required
This is a PbFree Device
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 45 VOLTS
1
2
3
MARKING
DIAGRAM
1 23
TO220 FULLPAK]
CASE 221AH
CT SUFFIX
AYWW
B2545G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B2545 = Device Code
G = PbFree Package
AKA = Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBRJ2545CTG
TO220
(PbFree)
50 Units/Rail
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. P0
1
Publication Order Number:
MBRJ2545CT/D

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