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PDF MTP5N40E Data sheet ( Hoja de datos )
| Número de pieza | MTP5N40E | |
| Descripción | High Energy Power FET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTP5N40E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
N−Channel Enhancement−Mode Silicon
Gate
This advanced high voltage TMOS E−FET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain−to−source diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and other
inductive loads, the avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor — Absorbs High Energy in the Avalanche
Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
http://onsemi.com
TMOS POWER FET
5.0 AMPERES, 400 VOLTS
RDS(on) = 1.0 W
TO−220AB
CASE 221A−06
Style 5
D
®G
S
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MTP5N40E/D
1 page  
MTP5N40E
SAFE OPERATING AREA INFORMATION
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 μs
0.1 ms
14
12
10
8
1 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
0.1
1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
6
TJ ≤ 150°C
4
2
0
0 100 200 300 400
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Switching
Safe Operating Area
50
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain−to−source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of
linear systems. The curves are based on a case
temperature of 25°C and a maximum junction temperature
of 150°C. Limitations for repetitive pulses at various case
temperatures can be determined by using the thermal
response curves. Motorola Application Note, AN569,
“Transient Thermal Resistance−General Data and Its Use”
provides detailed instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 8 is
the boundary that the load line may traverse without
incurring damage to the MOSFET. The fundamental limits
are the peak current, IDM and the breakdown voltage,
V(BR)DSS. The switching SOA shown in Figure 8 is
applicable for both turn−on and turn−off of the devices for
switching times less than one microsecond.
10000
1000
VDD = 250 V
ID = 5 A
VGS = 10 V
TJ = 25°C
td(off)
tf
tr
td(on)
100
10
1 10 100 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
http://onsemi.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTP5N40E.PDF ] | |
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