|
|
MTB9N25EのメーカーはON Semiconductorです、この部品の機能は「High Energy Power FET」です。 |
部品番号 | MTB9N25E |
| |
部品説明 | High Energy Power FET | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMTB9N25Eダウンロード(pdfファイル)リンクがあります。 Total 12 pages
MTB9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
D2PAK
CASE 418B−02
Style 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
MTB9N25E/D
1 Page MTB9N25E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 4.5 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 4.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 125 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (1)
(IS = 9.0 Adc, VGS = 0 Vdc )
(IS = 9.0 Adc, VGS = 0 Vdc , TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
250 —
— 328
Vdc
—
— mV/°C
μAdc
— — 10
— — 100
— — 100 nAdc
2.0 3.0 4.0 Vdc
— 7.0 — mV/°C
— 0.37 0.45 Ohm
Vdc
— 3.5 5.4
— — 4.7
3.0 5.2
— mhos
—
783 1100
pF
— 144 200
— 32 65
— 10 20
— 36 70
— 27 55
— 26 50
— 26 40
— 4.8 —
— 12.7 —
— 9.2 —
ns
nC
— 0.9 1.5
— 0.81 —
— 191 —
— 126 —
— 65 —
— 1.387 —
Vdc
ns
μC
nH
— 4.5 —
nH
— 7.5 —
http://onsemi.com
3
3Pages MTB9N25E
16 240
12
QT
180
8 VGS 120
Q1
4
Q3
Q2
ID = 9 A
TJ = 25°C 60
VDS
00
0 6 12 18 24 30
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 250 V
ID = 9 A
VGS = 10 V
TJ = 25°C
100
tr
td(off)
10 td(on)
tf
1
1 10 1
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
9.0
VGS = 0 V
7.5 TJ = 25°C
6.0
4.5
3.0
1.5
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with
an increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as
http://onsemi.com
6
6 Page | |||
ページ | 合計 : 12 ページ | ||
|
PDF ダウンロード | [ MTB9N25E データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MTB9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS | Motorola Semiconductors |
MTB9N25E | High Energy Power FET | ON Semiconductor |