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MTB9N25E の電気的特性と機能

MTB9N25EのメーカーはON Semiconductorです、この部品の機能は「High Energy Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MTB9N25E
部品説明 High Energy Power FET
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MTB9N25E Datasheet, MTB9N25E PDF,ピン配置, 機能
MTB9N25E
Designer’sData Sheet
TMOS E−FET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
D2PAK
CASE 418B02
Style 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB9N25E/D

1 Page





MTB9N25E pdf, ピン配列
MTB9N25E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.5 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 4.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 125 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 9.0 Adc, VGS = 0 Vdc )
(IS = 9.0 Adc, VGS = 0 Vdc , TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
250 —
— 328
Vdc
— mV/°C
μAdc
— — 10
— — 100
— — 100 nAdc
2.0 3.0 4.0 Vdc
— 7.0 — mV/°C
— 0.37 0.45 Ohm
Vdc
— 3.5 5.4
— — 4.7
3.0 5.2
— mhos
783 1100
pF
— 144 200
— 32 65
— 10 20
— 36 70
— 27 55
— 26 50
— 26 40
— 4.8 —
— 12.7 —
— 9.2 —
ns
nC
— 0.9 1.5
— 0.81 —
— 191 —
— 126 —
— 65 —
— 1.387 —
Vdc
ns
μC
nH
— 4.5 —
nH
— 7.5 —
http://onsemi.com
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3Pages


MTB9N25E 電子部品, 半導体
MTB9N25E
16 240
12
QT
180
8 VGS 120
Q1
4
Q3
Q2
ID = 9 A
TJ = 25°C 60
VDS
00
0 6 12 18 24 30
QT, TOTAL CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
1000
VDD = 250 V
ID = 9 A
VGS = 10 V
TJ = 25°C
100
tr
td(off)
10 td(on)
tf
1
1 10 1
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
9.0
VGS = 0 V
7.5 TJ = 25°C
6.0
4.5
3.0
1.5
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with
an increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as
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共有リンク

Link :


部品番号部品説明メーカ
MTB9N25E

TMOS POWER FET 9.0 AMPERES 250 VOLTS

Motorola Semiconductors
Motorola Semiconductors
MTB9N25E

High Energy Power FET

ON Semiconductor
ON Semiconductor


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