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IRF7524D1PbF の電気的特性と機能

IRF7524D1PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7524D1PbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7524D1PbF Datasheet, IRF7524D1PbF PDF,ピン配置, 機能
PD -95242
IRF7524D1PbF
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
l Lead-Free
Description
FETKYTM MOSFET & Schottky Diode
A1
A2
8K
7K
VDSS = -20V
S3
6 D RDS(on) = 0.27
G4
5D
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Maximum
100
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD -1.2A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
5/12/04

1 Page





IRF7524D1PbF pdf, ピン配列
10 VGS
TOP -7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
1
Power Mosfet Characteristics
10 VGS
TOP -7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
1
IRF7524D1PbF
0.1
0.01
0.1
-1.50V
20µs PULSE WIDTH
TJ= 25 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
0.1 -1.50V
0.01
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
0.01
1.5
VDS = -10V
20µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -1.2A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7524D1PbF 電子部品, 半導体
IRF7524D1PbF
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
TJ = 25°C
0.1
0.0
0.2 0.4 0.6 0.8
FFoorrwwaard VolttaaggeeDDrroopp--VVFF(MV)(V)
1.0
Fig. 12 -Typical Forward Voltage Drop
Characteristics
100
10 TJ = 150°C
125°C
1 100°C
0.1 75°C
50°C
0.01
25°C
0.001
0.0001
0
4 8 12 16
Reverse Voltage - VR (V)
)
20
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
160
Vr = 20V
140 RSqthuJaAre=w1a0v0e°C/W
120
100
80
D = 3/4
60 D = 1/2
D =1/3
40
D = 1/4
D = 1/5
20
DC
0A
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRF7524D1PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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