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IRF7459PbF の電気的特性と機能

IRF7459PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7459PbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7459PbF Datasheet, IRF7459PbF PDF,ピン配置, 機能
PD - 95459A
SMPS MOSFET
IRF7459PbF
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max ID
9.0m
12A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 12
12
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient †
Notes  through „ are on page 8
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
4/17/06

1 Page





IRF7459PbF pdf, ピン配列
IRF7459PbF
1000
100
10
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1000
100
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1
0.1
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
10
2.0V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10 TJ = 25°C
VDS= 15V
20µs PULSE WIDTH
1
2.0 2.5 3.0 3.5 4.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 12A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7459PbF 電子部品, 半導体
IRF7459PbF
0.010
0.020
0.009
VGS = 4.5V
0.018
0.016
0.014
0.008
VGS = 10V
0.012
0.010
ID = 12A
0.008
0.007
0
20 40 60 80
ID , Drain Current (A)
0.006
100 2.0 2.5 3.0 3.5 4.0
VGS, Gate -to -Source Voltage (V)
4.5
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14. On-Resistance Vs. Gate Voltage
700
ID
TOP
4.3A
600 7.7A
BOTTOM 9.6A
500
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
400
300
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
15V
DRIVER
+
- VDD
A
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF7459PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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