|
|
IRF7459PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7459PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7459PbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 95459A
SMPS MOSFET
IRF7459PbF
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max ID
9.0mΩ
12A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 12
12
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
4/17/06
1 Page IRF7459PbF
1000
100
10
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1000
100
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1
0.1
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
10
2.0V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10 TJ = 25°C
VDS= 15V
20µs PULSE WIDTH
1
2.0 2.5 3.0 3.5 4.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 12A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7459PbF
0.010
0.020
0.009
VGS = 4.5V
0.018
0.016
0.014
0.008
VGS = 10V
0.012
0.010
ID = 12A
0.008
0.007
0
20 40 60 80
ID , Drain Current (A)
0.006
100 2.0 2.5 3.0 3.5 4.0
VGS, Gate -to -Source Voltage (V)
4.5
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14. On-Resistance Vs. Gate Voltage
700
ID
TOP
4.3A
600 7.7A
BOTTOM 9.6A
500
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
400
300
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
- VDD
A
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRF7459PbF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7459PbF | Power MOSFET ( Transistor ) | International Rectifier |