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DMN2170UのメーカーはDiodesです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR」です。 |
部品番号 | DMN2170U |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | ||
メーカ | Diodes | ||
ロゴ | |||
このページの下部にプレビューとDMN2170Uダウンロード(pdfファイル)リンクがあります。 Total 4 pages
DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• 70mΩ @VGS = 4.5V
• 100mΩ @VGS = 2.5V
• 170mΩ @VGS = 1.5V
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
ESD PROTECTED TO 3kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Characteristic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
GS
TOP VIEW
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
2.3
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS 20 28 ⎯
V VGS = 0V, ID = 10μA
IDSS
⎯ ⎯ 1 μA VDS = 20V, VGS = 0V
IGSS
⎯ ⎯ ±10 μA VGS = ±12V, VDS = 0V
VGS(th) 0.45 ⎯ 1.0
V VDS = VGS, ID = 250μA
50 70
VGS = 4.5V, ID = 3A
RDS (ON) ⎯ 70 100 mΩ VGS = 2.5V, ID = 2.3A
125 170
VGS = 1.5V, ID = 0.5A
|Yfs| ⎯ 6 ⎯ S VDS =5V, ID = 2.4A
VSD ⎯ 0.7 0.9 V VGS = 0V, IS = 1.05A
Ciss
Coss
Crss
⎯ 217 ⎯
⎯ 62 ⎯
⎯ 34 ⎯
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DMN2170U
Document number: DS31182 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
1 Page DMN2170U
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information (Note 7)
Notes:
Part Number
DMN2170U-7
Case
SOT-23
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Packaging
3000/Tape & Reel
21N
21N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
Date Code Key (If Applicable)
Year
2007
Code
U
Month
Code
Jan Feb
12
2008
V
Mar Apr
34
2009
W
May Jun
56
2010
X
Jul Aug
78
2011
Y
Sep Oct
9O
2012
Z
Nov Dec
ND
Package Outline Dimensions
A
TOP VIEW B C
G
H
K
J
DF
L
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
F 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
DMN2170U
Document number: DS31182 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
3Pages | |||
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部品番号 | 部品説明 | メーカ |
DMN2170U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes |