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PDF FDB8443 Data sheet ( Hoja de datos )

Número de pieza FDB8443
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor　
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDB8443 Hoja de datos, Descripción, Manual

March 2013
FDB8443
N-Channel PowerTrench® MOSFET
tm
40 V, 182 A, 3.0 mΩ
Features
„ RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
„ QG(tot) = 142 nC ( Typ.)
„ Low Miller Charge, QGD = 32 nC( Typ.)
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
Applications
„ Power Tools
„ Motor drives and Uninterruptible Power Supplies
„ Synchronous Rectification
„ Battery Protection Circuit
D
G
S
D2-PAK
(TO-263)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Continuous (TA = 25oC, RθJA = 43oC/W)
- Pulsed
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
FDB8443
40
±20
182*
129*
120
25
See Figure 4
531
188
1.25
-55 to +175
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max.
(Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max.
FDB8443
0.8
62
43
Unit
V
V
A
mJ
W
W/oC
oC
Unit
oC/W
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
www.fairchildsemi.com

1 page




FDB8443 pdf
Typical Characteristics
1.2
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.15
1.10
ID = 250μA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
10000
Ciss
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
10
ID = 35A
8
6
VDD = 15V
VDD = 20V
VDD = 25V
4
2
0 0 20 40 60 80 100 120 140 160
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
5
www.fairchildsemi.com

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