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HUF75344A3 の電気的特性と機能

HUF75344A3のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75344A3
部品説明 N-Channel UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF75344A3 Datasheet, HUF75344A3 PDF,ピン配置, 機能
October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8m
tm
Features
• RDS(on) = 6.5m( Typ.)@ VGS = 10V, ID = 75A
• RoHS compliant
Description
• This N-channel power MOSFET is produced using Fairchild
Semiconductor’s innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored change. It was designed for
use in applications where power efficiency is important, such
as switching regulators, switching converters, motro drives,
relay drivers, low-voltage bus switches, and power manage-
ment in portable and battery-operated products.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 130oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
S
Ratings
55
±20
75
300
1153
288.5
1.92
-55 to +175
300
Ratings
0.52
40
Units
V
V
A
A
mJ
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
HUF75344A3 Rev. A1
1
www.fairchildsemi.com

1 Page





HUF75344A3 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100 6.0 V
5.5 V
5.0 V
10
7
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
VDS,Drain-Source Voltage[V]
6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.020
0.015
0.010
VGS = 10V
0.005
VGS = 20V
0.000
0
*Note: TJ = 25oC
70 140 210 280
ID, Drain Current [A]
350
Figure 5. Capacitance Characteristics
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
*Note:
Ciss 1. VGS = 0V
2. f = 1MHz
4000
2000
Coss
Crss
0
0.1 1 10 25
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
200
100
175oC
-55oC
10 25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
23456
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
8 VDS = 30V
VDS = 44V
6
4
2
*Note: ID = 75A
0
0 20 40 60 80 100
Qg, Total Gate Charge [nC]
HUF75344A3 Rev. A1
3 www.fairchildsemi.com


3Pages


HUF75344A3 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
HUF75344A3 Rev. A1
6 www.fairchildsemi.com

6 Page



ページ 合計 : 8 ページ
 
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部品番号部品説明メーカ
HUF75344A3

N-Channel UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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