DataSheet.jp

IRLR210 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR210
部品説明 Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



Total 7 pages
		

No Preview Available !

IRLR210 Datasheet, IRLR210 PDF,ピン配置, 機能
$GYDQFHG 3RZHU 026)(7
IRLR210
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 200V
Lower RDS(ON): 1.185(Typ.)
BVDSS = 200 V
RDS(on) = 1.5
ID = 2.7 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
200
2.7
1.7
9
±20
24
2.7
2.1
5
2.5
21
0.17
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
5.7
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1

1 Page





ページ 合計 : 7 ページ
PDF
ダウンロード
[ IRLR210.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRLR210

Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
IRLR210A

Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap