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MMSF5P02HD の電気的特性と機能

MMSF5P02HDのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMSF5P02HD
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MMSF5P02HD Datasheet, MMSF5P02HD PDF,ピン配置, 機能
MMSF5P02HD
Preferred Device
Power MOSFET
5 Amps, 20 Volts
PChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
http://onsemi.com
5 AMPERES
20 VOLTS
RDS(on) = 30 mW
PChannel
D
G
S
MARKING
DIAGRAM
8
SO8
CASE 751
STYLE 13
S5P02H
LYWW
1
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
NC
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF5P02HDR2 SO8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MMSF5P02HD/D

1 Page





MMSF5P02HD pdf, ピン配列
MMSF5P02HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0)
(Notes 3 & 5)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Cpk 2.0)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Notes 3 & 5)
Static DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)
(Cpk 2.0)
(Notes 3 & 5)
OnState Drain Current
(VDS 5.0 V, VGS = 4.5 V)
(VDS 5.0 V, VGS = 2.5 V)
Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)
(Note 3)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω) (Note 3)
Gate Charge
See Figure 8
(VDS = 6.0 Vdc, ID = 6.4 Adc,
VGS = 4.5 Vdc) (Note 3)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 2.5 Adc, VGS = 0 Vdc) (Note 3)
(IS = 2.5 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
See Figure 15
(IS = 2.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
20
0.7
10
5.0
14
Typ Max Unit
Vdc
−−
10 mV/°C
μAdc
1.0
25
100 nAdc
Vdc
0.9 1.4
2.6 mV/°C
mΩ
22 30
35 45
A
−−
−−
18 Mhos
1400
925
370
1960
1300
520
pF
19 40
28 55
130 200
90 150
27.3 38
3.4
12
8.0
ns
nC
0.77
0.6
95
35
60
0.151
1.2
180
Vdc
ns
μC
http://onsemi.com
3


3Pages


MMSF5P02HD 電子部品, 半導体
MMSF5P02HD
5.0
4.0
VDS
3.0
Q1
2.0
QT
VGS
Q2
10 1000
TJ = 25°C
ID = 1.0 A
8.0 VDD = 6.0 V
VGS = 4.5 V
6.0
100
4.0
td(off)
tf
tr
1.0
Q3
TJ = 25°C
ID = 6.4 A
2.0
00
0 4.0 8.0 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
td(on)
10
1.0 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
7.0
6.0
TJ = 25°C
5.0 VGS = 0 V
4.0
3.0
2.0
1.0
0
0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
6

6 Page



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