MTD20P06HDL Datasheet PDF - ON Semiconductor
| Part Number | MTD20P06HDL | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
| Logo |  |
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MTD20P06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic
Level
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low−voltage, high−speed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
Features
• Ultra Low RDS(on), High−Cell Density, HDTMOS
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
60 Vdc
60 Vdc
"15
"20
Vdc
Vpk
15 Adc
9.0
45 Apk
72 W
0.58 W/°C
1.75 W
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 15 Apk, L = 2.7 mH, RG = 25 W)
EAS 300 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.73
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. inch pad size.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
1
http://onsemi.com
20 AMPERES, 60 VOLTS
RDS(on) = 175 mW
P−Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4 Gate 1
YWW
12
3
DPAK
CASE 369C
Drain 2
20P
06HLG
Source 3
(Surface Mount)
STYLE 2
4
Drain
20P06HL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package Shipping†
MTD20P06HDL
DPAK
75 Units/Rail
MTD20P06HDLT4 DPAK 2500 Tape & Reel
MTD20P06HDLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTD20P06HDL/D
|
| |
 
MTD20P06HDL
6
QT
5
4
3
Q1
2
VDS
Q2
1 Q3
VGS
ID = 15 A
TJ = 25°C
50
45
40
35
30
25
20
15
10
5
00
0 4 8 12 16 20 24
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 30 V
ID = 15 A
VGS = 5.0 V
100 TJ = 25°C
tr
tf
td(off)
td(on)
10
1
1 10 100
RG, GATE RESISTANCE (Ohms)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
15
VGS = 0 V
TJ = 25°C
12
9
6
3
0
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
VSD, SOURCE−TO−DRAIN VOLTAGE (Volts)
Figure 10. Diode Forward Voltage versus Current
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| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MTD20P06HDL.PDF Datasheet ] | |
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