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PDF MTD20N03HDL Data sheet ( Hoja de datos )
| Número de pieza | MTD20N03HDL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTD20N03HDL
Preferred Device
Power MOSFET
20 Amps, 30 Volts, Logic Level
N−Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
30
Drain−Gate Voltage (RGS = 1.0 MW)
VDGR
30
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
±15
± 20
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID 20
ID 16
IDM 60
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 2)
PD
74
0.6
1.75
Operating and Storage Temperature Range
TJ, Tstg − 55 to
150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS 200 mJ
RqJC
RqJA
RqJA
TL
°C/W
1.67
100
71.4
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
30 mW@5.0 V
ID MAX
20 A
(Note 1)
N−Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4
12
3
DPAK
CASE 369C
STYLE 2
1 Gate
2 Drain
3 Source
YWW
20N
03HLG
4
Drain
4
1 Gate
1
2
3
DPAK
CASE 369D
STYLE 2
2
Drain
3 Source
YWW
20N
03HL
4
Drain
Y = Year
WW = Work Week
20N03HL = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
1
Publication Order Number:
MTD20N03HDL/D
1 page  
MTD20N03HDL
14 28
12 24
QT
10 20
8 VGS 16
6
Q1
4
2
Q3
0
02 4
Q2
68
12
8
ID = 20 A
TJ = 25°C 4
VDS
10 12
0
14
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 20 A
VGS = 5.0 V
TJ = 25°C
100
tr
tf
td(off)
10 td(on)
1 10
RG, GATE RESISTANCE (Ohms)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
20
VGS = 0 V
TJ = 25°C
16
12
8
4
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
VSD, SOURCE−TO−DRAIN VOLTAGE (Volts)
1.0
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
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