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FDS6675AのメーカーはFairchild Semiconductorです、この部品の機能は「30V P-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS6675A |
| |
部品説明 | 30V P-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6675Aダウンロード(pdfファイル)リンクがあります。 Total 5 pages
February 2003
FDS6675A
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –11 A, –30 V
RDS(ON) = 13 mΩ @ VGS = –10 V
RDS(ON) = 19 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6675A
FDS6675A
13’’
Ratings
–30
±25
–11
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)
1 Page Typical Characteristics
50
VGS = -10V
-6.0V
40
-4.5V -4.0V
30
20
-3.5V
-3.0V
10
0
0 0.5 1 1.5 2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
Figure 1. On-Region Characteristics.
1.8
ID = -11A
1.6 VGS = - 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -10V
40
30
TA = -55oC
25oC
125oC
20
10
0
1 1.5 2 2.5 3 3.5 4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = - 3.5V
-4.0V
-4.5V
-6.0V
-10V
10 20 30 40
-ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
ID = -5.5A
0.04
0.03
0.02
TA = 25oC
0.01
TA = 125oC
0
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6675A Rev C (W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ FDS6675A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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FDS6675A | 30V P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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