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PDF IRF7324D1PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7324D1PbF | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-95309A
IRF7324D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
l Lead-Free
A1
A2
S3
G4
8K
7K
6D
5D
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
VDSS = -20V
RDS(on) = 0.27Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dV/dt
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
dPeak Diode Recovery
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-20
± 12
-2.2
-1.8
-22
2.0
1.3
-0.74
16
-55 to + 150
Units
V
A
W
V/ns
mW/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
12/06/04
1 page  
IRF7324D1PbF
Power Mosfet Characteristics
600
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
500 Crss = Cgd
Coss = Cds + Cgd
400
12
ID= -2.2A
10 VDS= -16V
VDS= -10V
8
300 Ciss
6
200
100
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
4
2
0
0 2 4 6 8 10 12
QG Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7324D1PbF.PDF ] | |
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