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PDF IRLR4343PbF Data sheet ( Hoja de datos )
| Número de pieza | IRLR4343PbF | |
| Descripción | Digital Audio MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 95394A
DIGITAL AUDIO MOSFET
IRLR4343PbF
IRLU4343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU4343-701PbF
Key Parameters
VDS 55
RDS(ON) typ. @ VGS = 10V
42
RDS(ON) typ. @ VGS = 4.5V
57
Qg typ.
28
TJ max
175
V
m:
m:
nC
°C
D
D-Pak
I-Pak
G
IRLR4343
IRLU4343
I-Pak Leadform 701
S IRLU4343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
55
±20
26
19
80
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through are on page 10
www.irf.com
1
12/8/04
1 page  
IRLR/U4343PbF & IRLU4343-701PbF
200 700
ID = 19A
ID
600 TOP 2.4A
3.3A
150 BOTTOM 19A
500
100
TJ = 125°C
50
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
1000
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
100
0.01
10 0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
180
TOP
Single Pulse
160 BOTTOM 1% Duty Cycle
140 ID = 19A
120
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5
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