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IRLR4343PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR4343PbF
部品説明 Digital Audio MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR4343PbF Datasheet, IRLR4343PbF PDF,ピン配置, 機能
PD - 95394A
DIGITAL AUDIO MOSFET
IRLR4343PbF
IRLU4343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU4343-701PbF
Key Parameters
VDS 55
RDS(ON) typ. @ VGS = 10V
42
RDS(ON) typ. @ VGS = 4.5V
57
Qg typ.
28
TJ max
175
V
m:
m:
nC
°C
D
D-Pak
I-Pak
G
IRLR4343
IRLU4343
I-Pak Leadform 701
S IRLU4343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
55
±20
26
19
80
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through Š are on page 10
www.irf.com
1
12/8/04

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