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Datasheet IRL3302PBF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRL3302PBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRL3302PBF Datasheet, IRL3302PBF PDF,ピン配置, 機能
l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-95660
IRL3302PbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.020
ID = 39A
S
TO-220AB
Max.
39
25
160
57
0.45
± 10
14
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
7/30/04

1 Page



IRL3302PBF pdf, ピン配列
1000
VVGGSS
TTOOPP
151V0V
11820.860VV..V00VV
6.40.V0V
4.30.V0V
BOTTOM3.20.V5V
BOTTOM 2.5V
100
IRL3302PbF
1000
TTOOPP
VVGGSS
11152081VVV.00VV
8.60.V0V
6.40.V0V
4.30.V0V
BBOOTTTTOOMM32..205.VV5V
100
10
0.1
2.5V
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
2.5V
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 150° C
10
V DS= 15V
20µs PULSE WIDTH
1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0 ID = 39A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRL3302PBF 電子部品, 半導体
IRL3302PbF
0.022
0.021
VGS = 4.5V
0.020
0.019
0.020
0.018
0.019
0.017
0.018
0.017
VGS = 7.0V
0.016
0.015
I D = 39A
0.016
0
10 20 30
ID , Drain Current (A)
40
Fig 12. On-Resistance Vs. Drain Current
0.014
4
56789
VGS , Gate-to-Source Voltage (V)
A
10
Fig 13. On-Resistance Vs. Gate Voltage

6 Page





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