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l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-95660
IRL3302PbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.020Ω
ID = 39A
S
TO-220AB
Max.
39
25
160
57
0.45
± 10
14
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
7/30/04

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1000
VVGGSS
TTOOPP
151V0V
11820.860VV..V00VV
6.40.V0V
4.30.V0V
BOTTOM3.20.V5V
BOTTOM 2.5V
100
IRL3302PbF
1000
TTOOPP
VVGGSS
11152081VVV.00VV
8.60.V0V
6.40.V0V
4.30.V0V
BBOOTTTTOOMM32..205.VV5V
100
10
0.1
2.5V
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
2.5V
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 150° C
10
V DS= 15V
20µs PULSE WIDTH
1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0 ID = 39A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature


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IRL3302PbF
0.022
0.021
VGS = 4.5V
0.020
0.019
0.020
0.018
0.019
0.017
0.018
0.017
VGS = 7.0V
0.016
0.015
I D = 39A
0.016
0
10 20 30
ID , Drain Current (A)
40
Fig 12. On-Resistance Vs. Drain Current
0.014
4
56789
VGS , Gate-to-Source Voltage (V)
A
10
Fig 13. On-Resistance Vs. Gate Voltage

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