DataSheet.jp

IRL3302PBF データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRL3302PBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

Total 7 pages
		

No Preview Available !

IRL3302PBF Datasheet, IRL3302PBF PDF,ピン配置, 機能
l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-95660
IRL3302PbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.020
ID = 39A
S
TO-220AB
Max.
39
25
160
57
0.45
± 10
14
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
7/30/04

1 Page





ページ 合計 : 7 ページ
PDF
ダウンロード
[ IRL3302PBF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRL3302PBF

There is a function of Power MOSFET.

International Rectifier
International Rectifier

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap