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Datasheet IRL3202PBF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRL3202PBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRL3202PBF Datasheet, IRL3202PBF PDF,ピン配置, 機能
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD -95659
IRL3202PbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.016
ID = 48A
S
TO-220AB
Max.
48
30
190
69
0.56
± 10
14
270
29
6.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
7/30/04

1 Page



IRL3202PBF pdf, ピン配列
1000
100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
IRL3202PbF
1000
100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
10
2.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 2.0V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 25 °C
TJ = 150°C
V DS= 15V
20µs PULSE WIDTH
1
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 48A
1.5
1.0
0.5
VGS= 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRL3202PBF 電子部品, 半導体
IRL3202PbF
0.018
0.025
0.016
0.014
0.012
VGS = 4.5V
VGS = 7.0V
0.020
0.015
ID = 48A
0.010
0
10 20 30 40
I D , Drain Current (A)
50
60
0.010
0.0
2.0 4.0 6.0
VGS , Gate-to-Source Voltage (V)
A
8.0
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
6 www.irf.com

6 Page





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