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NTP10N40のメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | NTP10N40 |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNTP10N40ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
NTP10N40, NTB10N40
Preferred Device
Advance Information
Power MOSFET
10 Amps, 400 Volts
N−Channel TO−220 and D2PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
Typical Applications
• Switch Mode Power Supplies
• PWM Motor Controls
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain
− Continuous
− Continuous @ 100°C
− Single Pulse (tpv10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
400
400
"20
"40
10
7.5
35
142
1.14
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg − 55 to 150 °C
Single Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 10 A, L = 10 mH, RG = 25 Ω)
EAS 500 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
0.88
62.5
50
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case
for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
10 AMPERES
400 VOLTS
RDS(on) = 500 mΩ
N−Channel
D
G
4
S
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
Drain
NTP10N40
LLYWW
Gate
Source
NTB10N40
LLYWW
Gate Drain Source
Drain
NTx10N40 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP10N40
TO−220AB
50 Units/Rail
NTB10N40
D2PAK
50 Units/Rail
NTB10N40T4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NTP10N40/D
1 Page NTP10N40, NTB10N40
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
Q
H
Z
B
4
1 23
F
T
−T−
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
D2PAK
CASE 418B−03
ISSUE D
−B−
4
C
E
V
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
J
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 −−−
Z −−− 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 −−−
−−− 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
S 0.575 0.625
V 0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
14.60 15.88
1.14 1.40
http://onsemi.com
3
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部品番号 | 部品説明 | メーカ |
NTP10N40 | Power MOSFET ( Transistor ) | ON Semiconductor |