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Datasheet IRF3711ZSPbF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF3711ZSPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 12 pages
		
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IRF3711ZSPbF Datasheet, IRF3711ZSPbF PDF,ピン配置, 機能
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95530
IRF3711ZPbF
IRF3711ZSPbF
IRF3711ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 6.0m: 16nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
TO-220AB
IRF3711Z
D2Pak
IRF3711ZS
Max.
20
± 20
92 h
65 h
380
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.89
–––
62
40
TO-262
IRF3711ZL
Units
V
A
W
W/°C
°C
Units
°C/W
1
7/20/04

1 Page



IRF3711ZSPbF pdf, ピン配列
1000
100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
3.0V
10
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
IRF3711Z/S/LPbF
1000
100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
2.0
ID = 30A
VGS = 10V
1.5
10
1
2.0
VDS = 10V
60µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF3711ZSPbF 電子部品, 半導体
IRF3711Z/S/LPbF
0.02
ID = 15A
0.01 TJ = 125°C
TJ = 25°C
0.00
2.0
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
600
ID
500
TOP 7.3A
8.6A
BOTTOM 12A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 13c. Maximum Avalanche Energy
vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
IAS
Fig 13b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
www.irf.com

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