DataSheet.jp

IRF3711ZPbF データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF3711ZPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

Total 12 pages
		

No Preview Available !

IRF3711ZPbF Datasheet, IRF3711ZPbF PDF,ピン配置, 機能
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95530
IRF3711ZPbF
IRF3711ZSPbF
IRF3711ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 6.0m: 16nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
TO-220AB
IRF3711Z
D2Pak
IRF3711ZS
Max.
20
± 20
92 h
65 h
380
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.89
–––
62
40
TO-262
IRF3711ZL
Units
V
A
W
W/°C
°C
Units
°C/W
1
7/20/04

1 Page





ページ 合計 : 12 ページ
PDF
ダウンロード
[ IRF3711ZPbF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRF3711ZPbF

There is a function of Power MOSFET.

International Rectifier
International Rectifier

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap