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Datasheet IRFS4710PbF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFS4710PbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 11 pages
		
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IRFS4710PbF Datasheet, IRFS4710PbF PDF,ピン配置, 機能
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD- 95146
IRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014
ID
75A
TO-220AB
IRFB4710
D2Pak
IRFS4710
TO-262
IRFSL4710
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
1
04/22/04

1 Page



IRFS4710PbF pdf, ピン配列
IRFB/IRFS/IRFL4710PbF
1000
TOP
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
1
0.1
0.01
0.1
6.0V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
10 6.0V
20µs PULSE WIDTH
1 TJ = 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 175° C
100
10
TJ = 25°C
1
0.1
6.0
V DS= 50V
20µs PULSE WIDTH
7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 75A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFS4710PbF 電子部品, 半導体
IRFB/IRFS/IRFL4710PbF
15V
VDS
L
D R IV E R
RG
2V0GVS
tp
D .U .T
IA S
0.0 1
+
-
VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
350 ID
TOP
18A
300 32A
BOTTOM 45A
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

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