DataSheet.jp


Datasheet IRFIZ48VPbF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFIZ48VPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 8 pages
		
11

No Preview Available !

IRFIZ48VPbF Datasheet, IRFIZ48VPbF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ˆ
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
www.irf.com
PD-94834
IRFIZ48VPbF
HEXFET® Power MOSFET
D VDSS = 60V
RDS(on) = 12m
ID = 39A
S
TO-220 FULLPAK
Max.
39
27
290
43
0.29
± 20
72
15
5.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.5
65
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
11/13/03

1 Page



IRFIZ48VPbF pdf, ピン配列
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
1 TJ = 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFIZ48VPbF
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
4.5V
10
20µs PULSE WIDTH
1 TJ= 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175° C
10
V DS= 25V
1 20µs PULSE WIDTH
4 6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 72A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFIZ48VPbF 電子部品, 半導体
IRFIZ48VPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
400 ID
TOP
29A
51A
BOTTOM 72A
300
200
100
0
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRFIZ48VPbF.PDF ]

共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
IRFIZ48VPbF

There is a function of Power MOSFET.

International Rectifier
International Rectifier


多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap