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Datasheet IRF7832Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF7832Z
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 10 pages
		
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IRF7832Z Datasheet, IRF7832Z PDF,ピン配置, 機能
PD - 96975A
IRF7832Z
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
VDSS
30V
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.8m @VGS = 10V 30nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
30
± 20
21
17
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/30/05

1 Page



IRF7832Z pdf, ピン配列
IRF7832Z
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
0.01
0.1
2.3V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
10
1
0.1
2.3V
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
10 TJ = 150°C
TJ = 25°C
1
0.1
1
VDS = 15V
60µs PULSE WIDTH
234
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 21A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF7832Z 電子部品, 半導体
IRF7832Z
10 1600
ID = 21A
1400
TOP
ID
1.0A
8
1200
1.4A
BOTTOM 16A
1000
6 800
TJ = 125°C
600
4
TJ = 25°C
400
200
2
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
15V
DRIVER
+
-
VDD
A
I AS
V(BR)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
LD
VDS
+
VDD -
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
VDS
90%
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 16. Switching Time Test Circuit
6
10%
VGS
td(on) tr
td(off) tf
Fig 17. Switching Time Waveforms
www.irf.com

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