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Datasheet HAT2173N PDF ( 特性, スペック, ピン接続図 )

部品番号 HAT2173N
部品説明 Silicon N Channel Power MOS FET
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 
プレビュー
Total 8 pages
		
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HAT2173N Datasheet, HAT2173N PDF,ピン配置, 機能
HAT2173N
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 12.3 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D)
5(D)
4
G
5678
DDDD
SSS
12 3
REJ03G1684-0100
Rev.1.00
May 28, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
100
±20
25
100
25
25
62.5
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1684-0100 Rev.1.00 May 28, 2008
Page 1 of 7

1 Page



HAT2173N pdf, ピン配列
HAT2173N
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
8V
40 6.2 V
Pulse Test 6.0 V
5.8 V
30
20 5.6 V
10 5.4 V
VGS = 5.0 V
5.2 V
0
24
6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
ID = 50 A
200
20 A
100
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
REJ03G1684-0100 Rev.1.00 May 28, 2008
Page 3 of 7
Maximum Safe Operation Area
500
100
10 DCPOWp=er1a10tiommn1ss00 µs 10 µs
1
Operation in
this area is
0.1 limited by RDS(on)
Tc = 25°C
0.01 1 shot Pulse
0.1 0.3 1
3
10 30 100
500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
25°C
20
Tc = 75°C
-25°C
10
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
VGS = 8 V
10 10 V
5
2
1
1
3
10 30
100
Drain Current ID (A)


3Pages


HAT2173N 電子部品, 半導体
HAT2173N
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
50
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS - VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Waveform
90%
Vin 10%
Vout 10%
10%
90%
90%
td(on)
tr td(off)
tf
REJ03G1684-0100 Rev.1.00 May 28, 2008
Page 6 of 7

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