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HAT2173N データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 HAT2173N
部品説明 Silicon N Channel Power MOS FET
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 

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HAT2173N Datasheet, HAT2173N PDF,ピン配置, 機能
HAT2173N
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 12.3 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D)
5(D)
4
G
5678
DDDD
SSS
12 3
REJ03G1684-0100
Rev.1.00
May 28, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
100
±20
25
100
25
25
62.5
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1684-0100 Rev.1.00 May 28, 2008
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