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Datasheet IRF1405ZS-7P PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF1405ZS-7P
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRF1405ZS-7P Datasheet, IRF1405ZS-7P PDF,ピン配置, 機能
AUTOMOTIVE MOSFET
PD - 96905B
IRF1405ZS-7P
IRF1405ZL-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 4.9m‰
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID = 120A
D2Pak 7 Pin
TO-263CA 7 Pin
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
gRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient
ijJunction-to-Ambient (PCB Mount, steady state)
Max.
150
100
120
590
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
12/6/06

1 Page



IRF1405ZS-7P pdf, ピン配列
IRF1405ZS/L-7P
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
1000
100
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
0
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
2 4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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150
125
TJ = 25°C
100
75 TJ = 175°C
50
25
0
0
VDS = 10V
300µs PULSE WIDTH
25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRF1405ZS-7P 電子部品, 半導体
IRF1405ZS/L-7P
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1000
800
600
ID
TOP 14A
23A
BOTTOM 88A
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.5
4.0
3.5
3.0
2.5
ID = 150µA
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
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