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Datasheet IRFU2307Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFU2307Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFU2307Z Datasheet, IRFU2307Z PDF,ピン配置, 機能
PD - 96910
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested )
Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJunction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR2307Z
IRFU2307Z
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 16m
S ID = 42A
D-Pak
IRFR2307Z
I-Pak
IRFU2307Z
Max.
53
38
42
210
110
0.70
± 20
100
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.42
40
110
Units
°C/W
1
10/20/04

1 Page



IRFU2307Z pdf, ピン配列
IRFR/U2307Z
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 20V
60µs PULSE WIDTH
0.1
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
80
TJ = 25°C
60
40 TJ = 175°C
20
0
0
VDS = 10V
380µs PULSE WIDTH
10 20 30 40 50 60
ID,Drain-to-Source Current (A)
70
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRFU2307Z 電子部品, 半導体
IRFR/U2307Z
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP 3.4A
400 4.6A
BOTTOM 32A
300
200
100
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
5.0
ID = 1.0A
4.5 ID = 1.0mA
ID = 250µA
4.0 ID = 100µA
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

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