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Datasheet IRFU2607Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFU2607Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRFU2607Z Datasheet, IRFU2607Z PDF,ピン配置, 機能
AUTOMOTIVE MOSFET
PD - 96892
IRFR2607Z
IRFU2607Z
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB mount)
jRθJA Junction-to-Ambient
www.irf.com
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 22m
S ID = 42A
D-Pak
IRFR2607Z
I-Pak
IRFU2607Z
Max.
45
32
42
180
110
0.72
± 20
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
1
9/21/04

1 Page



IRFU2607Z pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFR/U2607Z
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
TJ = 175°C
TJ = 25°C
1.0
0.1
2.0
VDS = 20V
60µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
TJ = 25°C
50
40 TJ = 175°C
30
20
10
0
0
VDS = 10V
380µs PULSE WIDTH
10 20 30
ID, Drain-to-Source Current (A)
40
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRFU2607Z 電子部品, 半導体
IRFR/U2607Z
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
400
ID
TOP 3.5A
4.8A
300 BOTTOM 30A
200
100
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0
ID = 1.0A
4.5 ID = 1.0mA
ID = 250µA
4.0 ID = 50µA
3.5
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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