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IRFU2607Z データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFU2607Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

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IRFU2607Z Datasheet, IRFU2607Z PDF,ピン配置, 機能
AUTOMOTIVE MOSFET
PD - 96892
IRFR2607Z
IRFU2607Z
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB mount)
jRθJA Junction-to-Ambient
www.irf.com
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 22m
S ID = 42A
D-Pak
IRFR2607Z
I-Pak
IRFU2607Z
Max.
45
32
42
180
110
0.72
± 20
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
1
9/21/04

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